| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which will enhance the throughput of an ion implantation process by forming a TFT having an Lov region [a region where an LDD (lightly doped drain) region overlaps a gate electrode through a gate insulator film] and a TFT having an Loff region [a region where an LDD region does not overlap a gate electrode through a gate insulator film] on the same substrate without providing a resist mask that is used for forming the Lov region. SOLUTION: This method is used for manufacturing a semiconductor device provided with a transistor which has an active layer, a gate insulator film which is in contact with the active layer, a gate electrode which overlaps the active layer through the gate insulator film. By implanting impurities from one direction slanting to the active layer, a portion of a first region in the active layer, that overlaps the gate electrode through the gate insulator film, and a second region in the active layer excluding the first region are doped with impurities. The second region is positioned toward the one direction relative to the first region. COPYRIGHT: (C)2005,JPO&NCIPI
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