METHOD OF FORMING TRENCH, AND DEVICE INCLUDING TRENCH

摘要

PROBLEM TO BE SOLVED: To provide a method which can uniformly etch a homogeneous film, without using an embedded type etch stop layer. SOLUTION: The device comprises a first layer 110, an etch stop layer 120 arranged on the first layer 110, a second layer 130 arranged on the etch stop layer 120, and a first trench arranged so that it passes through the second layer 130, the etch stop layer 120, and a part of the first layer 110. Further, the method of forming this trench is provided. COPYRIGHT: (C)2005,JPO&NCIPI