| 摘要 |
An example method of manufacturing a semiconductor device having a capacitor includes sequentially depositing a lower metal layer, an insulating layer and an upper metal layer on a semiconductor substrate, removing a first photoresist pattern by using O2/N2 plasma, and removing polymer existing on the lower metal layer by using H2O/CF4 plasma. According to one example, the capacitor may include a lower electrode film, the capacitor insulating film and the upper electrode film.
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