发明名称 Heat treatment apparatus of light-emission type and method of cleaning same
摘要 After the maintenance of a heat treatment apparatus, a susceptor and a heating plate are moved upwardly and a flow of nitrogen gas from an inlet passage toward an outlet passage is produced prior to the heat treatment of a semiconductor wafer. In this state, flash lamps are turned on to cause the momentary expansion and contraction of the gas in a chamber, thereby scattering particles deposited on a bottom plate and the like. The scattered particles are removed by the flow of nitrogen gas passing through a bottom portion of the chamber and discharged outwardly through the outlet passage. The particles in the chamber are easily removed only by turning on the flash lamps a predetermined number of times at fixed time intervals while producing such a flow of nitrogen gas. This provides the heat treatment apparatus of a light-emission type and a method of cleaning the heat treatment apparatus capable of easily removing the particles in the chamber.
申请公布号 US2005047767(A1) 申请公布日期 2005.03.03
申请号 US20040926639 申请日期 2004.08.26
申请人 DAINIPPON SCREEN MFG. CO., LTD. 发明人 NOZAKI YOSHIHIDE
分类号 F27B17/00;F27B5/14;F27D5/00;F27D11/00;F27D11/02;F27D17/00;H01L21/00;H01L21/26;(IPC1-7):F27B5/14 主分类号 F27B17/00
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