SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND POWER CONVERTER USING SUCH SEMICONDUCTOR DEVICE

摘要

For obtaining a power semiconductor device wherein the controllable current is large and loss is low, the temperature of a bipolar semiconductor element employing a wide-gap semiconductor is raised using a heating means such as a heater. Specifically, the wide-gap bipolar semiconductor element is heated to exceed the temperature at which the decrease in the steady-state loss according to the decrease of built-in voltage that decreases as the temperature rises becomes larger than the increase in the steady-state loss according to the increase of on-resistance that increases as the temperature rises.