| 摘要 |
PURPOSE: A method for forming PG(Pyrolitic Graphite) film by CVD(Chemical Vapor Deposition) is provided to be utilized as a film electrode of ceramic films or a film resistance by using acetylene gas, methane gas, alakan gas and alkylene gas as main reaction gas. CONSTITUTION: A pyrolitic graphite film is formed on the BN film by CVD. The pyrolitic graphite film is formed at the temperature of 1000 to 2300°C under the pressure of 0.1 to 500 torr by using acetylene gas(C2H2:9.9995), methane gas(CH4:9.9995), alakan gas and alkylene gas as main reaction gas, hydrogen gas(H2), helium gas and argon gas(Ar) as carrier gas.
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