发明名称 POLISHING METHOD AND DEVICE OF SEMICONDUCTOR SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To improve a yield and work efficiency, by accurately judging that the time requiring the washing of an EPD window of the polishing cloth of a CMP device has come and abnormality is generated at the EPD window and automatically cleaning the EPD window. <P>SOLUTION: By rotating a turntable 2 and pressing a wafer 1 to the polishing cloth 3 while rotating it, the surface of the wafer 1 is polished and a polishing end point is judged by an optical type EPD detection unit 5. A change of the state of the stains of the EPD window 6 is detected on the basis of the value of reflected light intensity from the wafer 1 detected in the optical type EPD detection unit 5, it is judged that the time requiring the washing of the EPD window 6 has come or the abnormality is generated at the EPD window part 6, a device is stopped, and the EPD window 6 is automatically washed by an EPD window washing mechanism 9. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005057100(A) 申请公布日期 2005.03.03
申请号 JP20030287386 申请日期 2003.08.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ITOU FUMITAKA;SHIRAKASHI EIGO;HAMANAKA MASASHI
分类号 B24B37/013;B24B37/04;H01L21/304 主分类号 B24B37/013
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