| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for inexpensively making gate length finer without the need for a facility of high performance, which increases manufacture cost, and an expensive resist material. SOLUTION: A polysilicon layer 4 is formed on a gate oxide film 3 formed on a semiconductor substrate 1. A silicon oxide film 5 is formed on the polysilicon layer 4. A resist film 6 having a resist pattern in a surface shape of a gate electrode is formed on the silicon oxide film 5. Dry etching and wet etching are continuously performed with the resist film 6 as a mask. The silicon oxide film 5 is etched in a finer shape than the resist film 6. The resist film 6 is removed, the polysilicon layer 4 is etched with an etched silicon oxide film 5a as the mask, and a fine gate electrode 4a is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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