| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film semiconductor device by which a thin semiconductor film controlled in orientation can be formed easily and certainly. SOLUTION: The method of manufacturing thin film semiconductor device includes a step (S102) of forming a fine hole in the insulating surface of a substrate having the insulating surface on at least one side thereof, a step (S103) of forming an amorphous semiconductor film on the insulating surface of the substrate and in the fine hole, and a step (S104) of disposing a crystallization accelerator on part of the amorphous semiconductor film. The method also includes a step (S105) of obtaining a semiconductor film containing a crystalline component by applying a heat treatment onto the substrate; and a step (S106) of forming nearly single-crystal semiconductor crystal grains having a prescribed orientation in an area around the fine hole starting from the semiconductor film containing the crystalline component in a nonmolten state, by melting/crystallizing the semiconductor film containing the crystalline component while at least part of the semiconductor film containing the crystalline component formed in the fine hole is maintained in a nonmolten state. COPYRIGHT: (C)2005,JPO&NCIPI
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