| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an ion implanting device and a semiconductor device in which the quality of ion beam on the way of transportation can be investigated and evaluated and a delicate change of the product property can be suppressed. SOLUTION: The ion implanting device 101 comprises an ion source 11 which generates and extracts ion beam IB, a mass spectrometer 12 having a magnet, an ion beam convergence part such as an electrostatic lens and Q lens (four-pole lens), and an ion beam emittance measuring mechanism 15 between the ion source 11 and the mass spectrometer 121, preferably at the rear stage of the electrostatic lens 141. The ion beam emittance measuring mechanism 15 comprises an ion beam emittance measuring instrument 151 which is inserted into the passage of ion beam, that is, on a beam line at the time of measurement, and is controlled so as to be outside of the beam line at the time other than measurement, and can inspect at least divergence degree of ion beam. COPYRIGHT: (C)2005,JPO&NCIPI
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