ASYMMETRICAL STATIC RANDOM ACCESS MEMORY ELEMENT HAVING REDUCED BIT LINE LEAKAGE

摘要

PROBLEM TO BE SOLVED: To provide an asymmetrical static random access memory element having reduced bit line leakage. SOLUTION: A SRAM device (100) includes a column having opposing bit lines (140), asymmetrical memory cells (120) spanning the opposing bit lines (140) in alternating orientations, and a sense amplifier (130). The sense amplifier (130) comprises sensing circuitry (160) configured to sense the values stored in the cells and switching circuitry (150) configured to apply signals to the sensing circuitry (160) as a function of the orientations. COPYRIGHT: (C)2005,JPO&NCIPI