| 摘要 |
A semiconductor device (10, 100) comprising a Schottky charge transfer junction and a novel junction termination design. The device provides improved breakdown performance and reliability at reduced cost. The device may be fabricated by conventional technology on any semiconductor material, and is particularly suited for silicon carbide (SiC) and Group III-V nitrides (such as GaN). The junction termination design may be applied to PN charge transfer junctions (30) and combined with the Schottky charge transfer junctions (60) to form devices that comprise of one or more of such junctions. The overall result is significant improvement on-state conduction and switching characteristics.
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