| 摘要 |
A semiconductor device and a method for fabricating the same is disclosed, to prevent a defective contact of a line in a method of completely filling a minute contact hole having a high aspect ratio with a refractory metal layer, which includes the steps of forming a contact hole in an insulating interlayer of a semiconductor substrate; depositing a barrier metal layer on an inner surface of the contact hole and an upper surface of the insulating interlayer, wherein the process of depositing the barrier metal is performed by sequentially progressing one cycle of: injecting a reaction gas of SiH4 to the chamber, injecting a first purging gas to the chamber, injecting a reaction gas of WF6 to the chamber; injecting a second purging gas to the chamber, injecting a reaction gas of NH3 to the chamber, and injecting a third purging gas to the chamber; depositing a first metal layer for nucleation on the barrier metal layer by the atomic layer deposition process; and depositing a second metal layer on the first metal layer inside the contact hole, to fill the contact hole completely.
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