发明名称 |
Semiconductor device and semiconductor integrated circuit device |
摘要 |
A salicide block area is provided around a gate electrode. Polysilicon coupling portions are formed, which extend at plurality of points from the gate electrode to an area outside of an active region. A contact provided at this inactive region electrically connects the gate electrode to gate electrode metal wiring, which is provided above the gate electrode.
|
申请公布号 |
US2005045958(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20040766899 |
申请日期 |
2004.01.30 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ICHIKAWA KENJI |
分类号 |
H01L21/28;H01L21/3205;H01L21/8234;H01L21/84;H01L23/52;H01L23/62;H01L27/088;H01L27/12;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L23/62 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|