| 摘要 |
A processing method of a silicon controlled rectifier (SCR) for ESD protection. In the present invention, a high voltage ion implantation step is utilized to respectively implant the same type ion of comparably high dopant concentration in the first conductive dopant well and in the second conductive dopant well so as to form a first buried dopant area and a second buried dopant area. The silicon controlled rectifier of the present invention can be switch on more quickly and the proper control of the concentration of the buried dopant area is to control the breakdown voltage of the conjunction so as to control of the trigger voltage of the ESD.
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