| 摘要 |
Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter (150), base (140), and collector (130) regions; providing electrodes (115, 145, 165) for coupling electrical signal s with the emitter (150), base (140), and collector (130) regions; and adaptin g the base region (140) to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region (140).
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