| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the capacity of a trench gate type power MISFET simultaneously with preventing punch through thereof. <P>SOLUTION: A trench 7 to form a gate electrode 10 therein is formed in a depth of about 1μm or less to reduce the input capacity and feedback capacity of the trench gate type power MISFET. A p<SP>-</SP>-type semiconductor region 13 is formed in such a depth that the bottom of the trench 7 may not be covered. Below an n<SP>+</SP>-type semiconductor region 15 which will become a source region of the trench gate type power MISFET, a p-type semiconductor region 14 having a higher impurity concentration than the p<SP>-</SP>-type semiconductor region 13, and the p-type semiconductor region 14 is used as a punch through stopper layer of the trench gate type power MISFET. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
