| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor and its manufacturing method by which operation characteristic, especially threshold voltage characteristic or field mobility for the thin film transistor is improved without reducing manufacturing efficiency. SOLUTION: The manufacturing method includes a step for forming a silicon nitride film 2 on an insulating substrate 1, a step for forming a first silicon oxide film 3a on the silicon nitride film 2 by a plasma CVD using a mono-silane-based material gas, a step for forming a second silicon oxide film 3b on the first silicon oxide film 3a by a plasma CVD using a tetraethoxy-silane-based material gas, a step for forming a non-amorphous silicon film 10 on the second silicon oxide film 3b, a step for applying a YAG laser to a substrate wherein the a non-amorphous silicon film 10 is formed, and a step for patterning the substrate that has been already applied by a laser. COPYRIGHT: (C)2005,JPO&NCIPI
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