发明名称 |
Magnetoresistance effect film, magnetoresistance effect head and solid state memory |
摘要 |
The magnetoresistance effect film is capable of performing enough function without employing an antiferromagnetic layer. The film comprises: a seed layer; a first pinned magnetic layer formed on the seed layer; an antiferromagnetically coupling layer formed on the first pinned magnetic layer; a second pinned magnetic layer formed on the antiferromagnetically coupling layer; a nonmagnetic layer formed on the second pinned magnetic layer; a free magnetic layer formed on the nonmagnetic layer; and a protection layer formed on the free magnetic layer. The seed layer fixes magnetizing directions of the first and the second pinned magnetic layer. The seed layer is made of a material which does not exchange-couple with the first pinned magnetic layer.
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申请公布号 |
US2005047029(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20040773902 |
申请日期 |
2004.02.06 |
申请人 |
FUJITSU LIMITED |
发明人 |
NOMA KENJI |
分类号 |
G11B5/39;H01F10/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;H01L43/10;(IPC1-7):G11B5/33;G11B5/127 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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