| 发明名称 |
METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND LIQUID CRYSTAL DISPLAY DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor having high electrical characteristics, and to provide a thin film transistor and a liquid crystal display device loaded with the thin film transistor. <P>SOLUTION: The method of manufacturing an n-type thin film transistor 9 and a p-type thin film transistor 12 formed of polysilicon films 4 includes a step of forming an amorphous silicon film 3 on a glass substrate 1, a step of forming a polysilicon film 4 containing a polysilicon film 4a containing crystal grains having relatively large diameters and another polysilicon film 4b containing crystal grains having relatively small diameters by melting the amorphous silicon film 3, and an oxidizing step of oxidizing the polysilicon film 4b. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2005057045(A) |
申请公布日期 |
2005.03.03 |
| 申请号 |
JP20030286000 |
申请日期 |
2003.08.04 |
| 申请人 |
MITSUBISHI ELECTRIC CORP;ADVANCED DISPLAY INC |
发明人 |
KUBOTA TAKESHI;TAKANABE SHOICHI;TERAMOTO HIROSHI;SAKAMOTO TAKAO;IMAMURA TAKUJI |
| 分类号 |
G02F1/1368;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;G02F1/136 |
主分类号 |
G02F1/1368 |
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