SELF-ALIGNED SOI WITH DIFFERENT CRYSTAL ORIENTATION USING WAFER BONDING AND SIMOX PROCESS

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit device which is formed on a SOI(silicon-on-insulator) substrate, which can realize highest performance of a specific device and has different crystal orientations. SOLUTION: The integrated circuit device includes at least the SOI substrate which has an upper semiconductor layer of a first crystal orientation and a semiconductor material of a second crystal orientation, the semiconductor material is substantially on the same plane surface and its thickness is the same to that of the upper semiconductor layer, and in an integrated circuit structure, the first crystal orientation is different from the second crystal orientation. The SOI substrate is formed by wafer bonding, ion implantation, and annealing. COPYRIGHT: (C)2005,JPO&NCIPI