发明名称 |
FERROELECTRIC MEMORY CHARACTERISTIC CHANGING METHOD AND FERROELECTRIC MEMORY MANUFACTURING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory characteristic changing method capable of imprinting in a time shorter than a conventional imprinting time and supplementing the reduction of a polarizing amount due to relaxation effect to improve reading characteristics, in a ferroelectric memory. SOLUTION: The ferroelectric capacitor is heated so as to become a predetermined temperature or a high-temperature state and intermittent electric field is impressed on the ferroelectric capacitor at the high-temperature state. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2005057010(A) |
申请公布日期 |
2005.03.03 |
申请号 |
JP20030285253 |
申请日期 |
2003.08.01 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMADA TAKAYOSHI;KATO TAKEHISA;SHIMADA YASUHIRO;KAYAMA SHINZO |
分类号 |
H01L27/105;G11C29/00;G11C29/06;H01L21/8246;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|