| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity in the film thickness of a film deposited on a substrate by reducing variation in the film thickness caused by the rotation of the substrate and the rotation of a magnet as for a sputtering method. SOLUTION: In the sputtering method, gas is exhausted while gas is fed into a reaction chamber, then, while controlling the pressure to the prescribed one, plasma is generated in the reaction chamber, and negative voltage is applied to a target, so that a substrate placed on a substrate holder confronted with the target is treated, the rear face of a face confronted with the substrate of the target is provided with a magnetic circuit, rotation is performed in such a manner that the central axis of the magnetic circuit and the central axis of the substrate holder are made eccentric, and the rotational speed of the magnetic circuit and the substrate is controlled in accordance with film deposition time, so that the position of the substrate on the start of the rotation and that on the finish of the rotation are made coincident. COPYRIGHT: (C)2005,JPO&NCIPI
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