发明名称 |
METHOD FOR FABRICATING A CONDUCTIVE PLUG IN INTEGRATED CIRCUIT |
摘要 |
A method for fabricating a conductive plug device is disclosed. A semiconductor substrate having a diffusion region thereon is provided. A dielectric layer is deposited over the semiconductor substrate. An opening is formed in the dielectric layer to expose a portion of the diffusion region. An un-doped CVD silicon layer is deposited on interior walls of the opening. A pure CVD phosphorus layer is in-situ deposited on the un-doped CVD silicon layer. The pure CVD phosphorus layer thereafter diffuses into the subjacent un-doped CVD silicon layer to form a doped silicon layer. Subsequently, a second un-doped CVD silicon layer is in-situ deposited on the doped silicon layer.
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申请公布号 |
US2005048766(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20030605007 |
申请日期 |
2003.08.31 |
申请人 |
WU WEN-CHIEH;CHEN YI-NAN;WU CHUN-YI |
发明人 |
WU WEN-CHIEH;CHEN YI-NAN;WU CHUN-YI |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/476;H01L21/22;H01L21/38;H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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