Fabrication of flip-chip light emitting diode device by fabricating light emitting diode devices on epitaxial wafer, dicing the epitaxial wafer, flip chip bonding the device die to mount, and reducing thickness of growth substrate

摘要

A flip-chip light emitting diode device is fabricated by fabricating light emitting diode devices on the epitaxial wafer, dicing the epitaxial wafer, flip chip bonding the device die to mount (12), and reducing thickness of the growth substrate of the device die. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to bonding pads (26, 28) of the mount. Fabrication of flip-chip light emitting diode device includes: (a) depositing epitaxial layers on a growth substrate to produce an epitaxial wafer, (b) fabricating a number of light emitting diode devices on the epitaxial wafer, (c) dicing the epitaxial wafer to generate a device die, flip chip bonding the device die to a mount, and subsequent to the flip chip bonding, (d) reducing a thickness of the growth substrate of the device die. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. An independent claim is also included for a flip-chip light emitting diode device including: (i) a mount including bonding bumps (30); (ii) a light emitting diode device die having a device layers stack (14) that is flip chip bonded to the bonding bumps of the mount; and (iii) an underfill material arranged between the light emitting diode device die and the mount. The underfill material supports the light emitting diode device die and preventing the light emitting diode device die from fracturing.