| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystallization method for increasing a crystal grain size of a polycrystalline silicon layer and obtaining a uniform distribution by forming a seed crystal in a crystallization process of the polycrystalline silicon layer. SOLUTION: A seed is formed in a surface of a substrate before an amorphous silicon layer is formed in the substrate. The output energy density of pulse laser can be thereby controlled within a wide range. In crystal molding, since a seed crystal already exists between the substrate and a molten polycrystalline silicon, the polycrystalline silicon layer under coagulation crystallizes transversely from both sides of the seed toward an outside. Therefore, it is possible to form a thin high uniformity silicon layer whose crystal grain size is large and distribution is uniform. Furthermore, the method comprises definition of a first zone and a second zone in the surface of a substrate, formation of a seed crystal in the first zone, formation of an amorphous silicon layer to cover the first zone and the second zone and melting of the amorphous silicon layer by irradiating the amorphous silicon layer with laser. COPYRIGHT: (C)2005,JPO&NCIPI
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