发明名称 Semiconductor devices and methods of fabricating the same
摘要 Embodiments include a semiconductor device comprising: a pad formed on an insulating layer and having an electric connection region with external components; and a protective insulating layer which has an aperture for exposing the electric connection region. The protective insulating layer may include a first insulating layer and a second insulating layer, and side surfaces of these insulating layers are exposed to the aperture. At least part of the side surfaces surrounding the electric connection region have a tapered configuration at an acute angle to a top surface of the pad. This semiconductor device not only enables reduction of the fabrication steps, but also provides a reliable passivation structure for a pad with sufficient thickness and stress relaxation characteristics.
申请公布号 US2005046025(A1) 申请公布日期 2005.03.03
申请号 US20040962735 申请日期 2004.10.12
申请人 KANDA ATSUSHI 发明人 KANDA ATSUSHI
分类号 H01L23/52;H01L21/3205;H01L21/4763;H01L21/60;H01L23/485;H01L29/76;(IPC1-7):H01L29/76 主分类号 H01L23/52
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