| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a heterojunction with the first semiconductor region.
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| 申请公布号 |
US2005045892(A1) |
申请公布日期 |
2005.03.03 |
| 申请号 |
US20040898224 |
申请日期 |
2004.07.26 |
| 申请人 |
HAYASHI TETSUYA;TANAKA HIDEAKI;HOSHI MASAKATSU;KANEKO SAICHIROU |
发明人 |
HAYASHI TETSUYA;TANAKA HIDEAKI;HOSHI MASAKATSU;KANEKO SAICHIROU |
| 分类号 |
H01L21/04;H01L29/24;H01L29/739;H01L29/78;H01L29/808;H01L29/861;H01L29/872;(IPC1-7):H01L29/15;H01L21/00 |
主分类号 |
H01L21/04 |
| 代理机构 |
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