发明名称 |
Process for fabrication of a ferroelectric capacitor |
摘要 |
A process for the fabrication of a ferroelectric capacitor comprising depositing a layer of Ti 5 over an insulating layer 3 of Al2O3, and oxidising the Ti layer to form a TiO2 layer 7. Subsequently, a layer of PZT 9 is formed over the TiO2 layer 7. The PZT layer 9 is subjected to an annealing step in which, due to the presence of the TiO2 layer 7 it crystallises to form a layer 11 with a high degree of (111)-texture.
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申请公布号 |
US2005045932(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20030651614 |
申请日期 |
2003.08.29 |
申请人 |
HORNIK KARL;BRUCHHAUS RAINER;NAGEL NICOLAS |
发明人 |
HORNIK KARL;BRUCHHAUS RAINER;NAGEL NICOLAS |
分类号 |
H01L21/02;H01L21/316;(IPC1-7):H01L21/00;H01L29/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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