发明名称 |
Nonvolatile semiconductor storage device, and liquid crystal display device including the same |
摘要 |
A nonvolatile semiconductor storage device including: a plurality of memory cell unit groups each comprising one or more NAND nonvolatile memory cell units each comprising at least one memory cell having a control gate, a first selection transistor having a first selection gate, and a second selection transistor having a second selection gate, the memory cell unit groups each further comprising a control gate line connected to the control gate, a first selection gate line connected to the first selection gate, and a second selection gate line connected to the second selection gate; a common control gate line connected commonly to the control gate lines of different ones of the memory cell unit groups; a first common selection gate line connected commonly to the first selection gate lines of different ones of the memory cell unit groups; and a second common selection gate line connected commonly to the second selection gate lines of different ones of the memory cell unit groups; wherein the memory cells in the respective memory cell unit groups are each uniquely selected on the basis of a combination of the common control gate line and the first and second common selection gate lines.
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申请公布号 |
US2005047209(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20040919777 |
申请日期 |
2004.08.16 |
申请人 |
FUJIO MASUOKA;SHARP KABUSHIKI KAISHA |
发明人 |
MASUOKA FUJIO;SAKURABA HIROSHI;MATSUOKA FUMIYOSHI;UENO SYOUNOSUKE;MATSUYAMA RYUSUKE;HORII SHINJI |
分类号 |
G02F1/133;G09G3/20;G09G3/36;G11C16/02;G11C16/04;G11C16/06;(IPC1-7):G11C11/34 |
主分类号 |
G02F1/133 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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