Semiconductor element especially a non punch through field stop IGBT or p IGBT has highly doped layer in region near back surface of semiconductor but separated from rear electrode

摘要

A semiconductor element comprises a semiconductor body (20) with active zones (1,2) on the front surface and an electrode (3) on the rear surface. There is a highly-doped and/or metallic conductive region in the region (6) of the rear side but separated from it.