发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes: a device substrate having a semiconductor layer separated by a dielectric layer from a base substrate; a memory cell array having a plurality of memory cells formed and arranged on the semiconductor layer of the device substrate, each the memory cell having a MOS transistor structure with a body in an electrically floating state to store data based on a majority carrier accumulation state of the body; and a sense amplifier circuit configured to read out data of a selected memory cell in the memory cell array to store the read data in a data latch, then transfer the read data to an output circuit and write back the read data into the selected memory cell.
申请公布号 US2005047240(A1) 申请公布日期 2005.03.03
申请号 US20030617046 申请日期 2003.07.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IKEHASHI TAMIO;OHSAWA TAKASHI;FUJITA KATSUYUKI
分类号 H01L27/108;G11C7/06;G11C11/401;G11C11/404;G11C11/406;G11C11/4091;G11C16/00;H01L21/8242;(IPC1-7):G11C7/00 主分类号 H01L27/108
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