| 摘要 |
PROBLEM TO BE SOLVED: To provide a stripper composition for a resist which can easily strip in a short time a resist applied on a semiconductor such as Si, GaAS, GaN and InP, a metal wiring and an interlayer insulating thin film, or a resist remaining after dry etching, or a resist residue remaining after ashing after dry etching, which does not corrode the semiconductor and which maintains the characteristics of a field effect transistor (FET), and to provide a method for stripping a resist and a method for manufacturing a semiconductor element by using the above stripper composition for a resist. SOLUTION: The stripper composition for a resist contains (A) amine, (B) an organic solvent having 18 to 33 MPa<SP>1/2</SP>Hansen's solubility parameter, (C) saccharides and (D) water by 0 to 5 wt.%. The method for stripping a resist is carried out by using the above stripper composition for a resist. The method for manufacturing a semiconductor element includes a process of stripping a resist, and in the process of stripping a resist, the above stripper composition for a resist is used to strip a resist. COPYRIGHT: (C)2005,JPO&NCIPI |
