发明名称 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
摘要 Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
申请公布号 US2005045593(A1) 申请公布日期 2005.03.03
申请号 US20040950656 申请日期 2004.09.28
申请人 LAM RESEARCH CORPORATION 发明人 REN DAXING;HUBACEK JEROME S.;WEBB NICHOLAS E.
分类号 H01L21/3065;C23C16/44;H01J37/32;H01L21/205;(IPC1-7):C23F1/00 主分类号 H01L21/3065
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