发明名称 Semiconductor memory has memory cells wordlines and bitlines with a device to dynamically alter the electrical active length of the bitlines
摘要 <p>A semiconductor memory cell comprises many memory cells (10), controlled by wordlines (WL) and having bitlines (BL) to transmit information into and out of the cells. There is at least one device (20,28) to dynamically alter the electrically active length of at least one bitline.</p>
申请公布号 DE10334125(A1) 申请公布日期 2005.03.03
申请号 DE2003134125 申请日期 2003.07.25
申请人 INFINEON TECHNOLOGIES AG 发明人 ZIELBAUER, JUERGEN
分类号 G11C11/406;G11C11/4076;G11C11/408;G11C11/4097;(IPC1-7):G11C11/40;G11C29/00;G11C7/18;G11C7/02;G11C5/06 主分类号 G11C11/406
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