发明名称 |
SILICON MANUFACTURING APPARATUS |
摘要 |
<p>A polycrystal silicon manufacturing apparatus capable of preventing molten silicon from being solidified at the lower end of a reaction tube due to the lowering of temperature at the lower end when the inner surface of the reaction tube is heated to a temperature equal to or higher than the melting point of silicon and deposited silicon is fallen to a lower collection part for collection. The apparatus comprises an infrared ray radiating device heating the outer periphery of the lower end part (2a) of the reaction tube (2) by infrared ray or a temperature lowering prevention means such as a lower end side coil (4L) formed of a coil near the lower end of a high-frequency heating coil (4) and having a heating strength increased more than that of a coil (4U) located above near the lower end part. When the reaction tube (2) is heated by the high-frequency heating coil (4), the temperature of the lower end part (2a) can be prevented from being lowered by the temperature lowering prevention means.</p> |
申请公布号 |
WO2005019106(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
WO2004JP11774 |
申请日期 |
2004.08.17 |
申请人 |
TOKUYAMA CORPORATION;NAKASHIMA, JUNICHIROU;ODA, HIROYUKI |
发明人 |
NAKASHIMA, JUNICHIROU;ODA, HIROYUKI |
分类号 |
C01B33/03;C30B11/00;C30B29/06;(IPC1-7):C01B33/03 |
主分类号 |
C01B33/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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