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发明名称
Verfahren zur Herstellung der Gateelektrode einer CMOS-Einrichtung
摘要
申请公布号
DE19541496(B4)
申请公布日期
2005.03.03
申请号
DE1995141496
申请日期
1995.11.07
申请人
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.
发明人
KIM, HYEON SOO;LEE, CHOONG HUN
分类号
H01L29/78;H01L21/28;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/823
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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