METHOD FOR SELECTIVELY REMOVING HIGH-K MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a new, reliable method for etching a high-k material with sufficient selectivity for SiO2layer and silicon layer. SOLUTION: The method for selectively removing a high-k material includes a step for providing a high-k material layer 5 on a semiconductor substrate; and a step for immersing the high-k material layer 5 into a solution containing hydrogen fluoride, an organic compound, and an inorganic acid. It may further include a step for performing a damage-adding step to the high-k material layer 5. COPYRIGHT: (C)2005,JPO&NCIPI