发明名称 |
Semiconductor device with borderless contact structure and method of manufacturing the same |
摘要 |
A semiconductor device comprising a borderless contract structure and a method of manufacturing the same. An etch-protecting layer is formed on a semiconductor substrate having gate electrodes formed on an active area of the substrate. Spacers are formed on the etch-protecting layer, and removed after performing a source/drain ion-implantation process to secure a region for forming a contact hole between the gate electrodes. After sequentially forming an etch-stopping layer and an insulating interlayer on a resultant structure, the etch-stopping layer and the insulating interlayer are etched to form the first contact hole which exposes a surface of the semiconductor substrate between gate electrodes and a second contact hole for the borderless contact which exposes the surface of the semiconductor substrate adjacent to the field oxide layer and a portion of a surface of the field oxide layer.
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申请公布号 |
US2005045968(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20040939266 |
申请日期 |
2004.09.10 |
申请人 |
KWEAN SUNG-UN;HWANG JAE-SEUNG |
发明人 |
KWEAN SUNG-UN;HWANG JAE-SEUNG |
分类号 |
H01L21/28;H01L21/60;H01L21/768;(IPC1-7):H01L21/823;H01L29/76;H01L29/94 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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