| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor power module which is improved in reliability and heat dissipation property using a substrate of metal, such as inexpensive Al, Cu, or the like, without using an insulating substrate of a material, such as AlN, Al<SB>2</SB>O<SB>3</SB>or the like, so as to cope with an increase in size and output power. <P>SOLUTION: The linear expansion coefficient of filler epoxy resin 15 is set higher than that of solder 3 or at (24±3)×10<SP>-6</SP>/°C, its Young's modulus is set at 1 to 12 Gpa, preferably at 5 to 8 Gpa. A semiconductor chip 1 is surrounded with the epoxy resin 15 that has physical properties near to those of the solder 3, is somewhat soft, and high in adhesion, so that the semiconductor chip 1 can be protected against large stress acting on it so as to protect its element unit against interface delamination damage, and the solder 3 can be ensured a longer service life. The glass transition temperature Tg of the filler resin 15 is set at a temperature of 150°C or above, so that an adverse affect caused by the thermal expansion of the filler resin 15 at a high temperature such as a secondary reflow or the like can be restrained. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
