| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of operating a NAND memory module composed of p-type memory cells in order to solve the various problems raised by the conventional technology. <P>SOLUTION: The method of operating NAND memory module includes a step of providing a plurality of memory cells which respectively contains substrates, first p-type doped regions 18, second p-type doped regions 20, ONO films 14, and gates 16; save 2-bit data; and are disposed in a matrix pattern. The gates 16 of the memory cells in the same column are connected to the same word line and adjacent memory cells in the same row share the p-type doped regions 18 and 20. In addition, the p-type doped region 18 of the first memory cell in each row is connected to the first transmission line of the same row, and the second p-type doped region 20 of the last memory cell in each row is connected to the second transmission line of the same row. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
