| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an extreme ultraviolet ray (EUV) exposure mask in which, in an extreme ultraviolet ray (EUV) exposure mask in which a multilayer film 2 as a high reflection region of exposed light is formed on a substrate 1, and a thin film pattern 3 as a low reflection region is formed on the multilayer film, a film defect such as a particle or the like is hard to occur in the multilayer film for use in the reflection region of the EUV mask for enhancing a transfer resolution property by an EUV exposure; to provide an EUV exposure mask blank for producing the same; and to provide a pattern forming method using its mask. <P>SOLUTION: In the ultimate ultraviolet ray exposure mask, in a multilayer film 2 as the high reflection part, two types thereof are laminated alternately. One is a film in which a metal is a main component and the other is a film in which the metal and Si are main components. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
