| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor component that is provided with good cooling characteristics and high-speed device characteristics, and to provide a method of manufacturing the component. SOLUTION: A supporting substrate 5 is constituted by respectively forming silicon oxide films 2 and 3 on the rear and front surfaces of a silicon substrate 1, and forming a groove 4 which becomes the flow passage of a cooling medium in the silicon oxide film 3 formed on the front surface of the substrate 1 by etching. Then an element substrate 6 in which an insulating film 8 having the thickness that is required at the time of melt-joining the film 8 to a silicon section 7 is bonded by melting to the supporting substrate 5 through the silicon oxide film 3 containing the groove 4 of the supporting substrate 5. Finally, the semiconductor component is constituted by forming a semiconductor device such as the NMOSFET 9, PMOSFET 10, etc., in the silicon section 7 of the element substrate 6. COPYRIGHT: (C)2005,JPO&NCIPI |
