| 摘要 |
The invention, which relates to a method for checking periodic structures on lithography masks, in which an image of the structure of the lithography mask is generated by an imaging optic of a microscope, provides a method for inspecting structures on lithography masks which is used to represent deviations in the periodic structure of a lithography mask, a better demarcation of the periodic structure from a deviation being achieved. The parameters of wavelength lambda, the numerical aperture NA and the coherence of the illumination sigma of the imaging optic of the microscope are chosen such that the inequality P<=lambda/NA(1+sigma) describing the resolution limit for a periodic structure having the period P is fulfilled, and in that the image of the structure that is generated in this way is evaluated for deviations in the periodic structure.
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