| 摘要 |
PROBLEM TO BE SOLVED: To provide a protection circuit having a small pattern area for countermeasure of an electrostatic discharge damage capable of passing an electrostatic discharge damage test of a human body model and a machine model. SOLUTION: The protection circuit has an electrode pad 10 to which an input signal is applied, a polysilicon resistor 11 with its one end connected to the pad 10, an N-channel type MOS transistor M3 with its drain connected to the other end of the resistor 11 and with its source and gate grounded, a first NPN-type bipolar transistor B1 with its base and emitter connected to a connecting point of the pad 10 and the resistor 11 and with its collector applied by a power voltage Vcc, and a second NPN-type bipolar transistor B2 with its collector connected to a connecting point of the pad 10 and the resistor 11 and with its base and emitter grounded. COPYRIGHT: (C)2005,JPO&NCIPI
|
