发明名称 |
Floating gate memory cell, floating gate memory arrangement circuit arrangement and method for fabricating a floating gate memory cell |
摘要 |
Floating gate memory cell having a first layer with first and second source/drain regions and a channel region arranged between and next to the first and second source/drain regions, and a floating gate layer arranged on the first layer, wherein the first and second source/drain regions and the floating gate layer are formed of a metallically conductive material, and the channel region is formed of an electrically insulating material.
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申请公布号 |
US2005048720(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20040926838 |
申请日期 |
2004.08.25 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GRAHAM ANDREW;HOFMANN FRANZ;SPECHT MICHAEL |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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