| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern thickening material featuring that ArF laser light can be used, a resist pattern can be thickened without depending on its size by only applying the material on the resist pattern such as a line of an ArF resist or the like, and a fine resist cut-out pattern or the like exceeding the exposure limit can be easily and efficiently formed at a low cost. SOLUTION: The resist pattern thickening material contains a resin and an interphase transfer catalyst. In the method for manufacturing a resist pattern, after a resist pattern is formed, the above resist pattern thickening material is applied to cover the surface of the resist pattern. The method for manufacturing a semiconductor device includes: a resist pattern forming process of applying the above resist pattern thickening material to cover the surface of a resist pattern after the resist pattern is formed on the objective surface to be worked; and a patterning process of patterning the surface to be worked by etching by using the thickened resist pattern as a mask. COPYRIGHT: (C)2005,JPO&NCIPI |
