| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment system in which gas can be supplied uniformly over the entire surface of a wafer. SOLUTION: In a batch remote plasm CVD system comprising a process tube 31 forming a treatment chamber 32 for containing a boat 25 holding a group of wafers 1 and treating the wafers, a gas supply pipe 35 for supplying treatment gas 61 to the treatment chamber 32, an exhaust pipe 36 of the treatment chamber 32, a barrier 41 laid on the inner circumferential surface of the treatment chamber 32 to form a plasma chamber 40, and a gas supply opening 42 made in the barrier 41, a partition plate assembly 50 comprising upper and lower end plates 51 and 52, four columns 53 and a pair of partition plates 54 and 54 is disposed concentrically to the boat 25 in the treatment chamber 32 wherein the space between both partition plates 54 and 54 constitutes a gas supply pipe side conduction port 55 and an exhaust pipe side conduction port 56. Since the gas blown out from the gas supply opening flows between the wafers from the gas supply pipe side conduction port 55 and spreads over the entire surface of the wafers, gas treatment is carried out uniformly. COPYRIGHT: (C)2005,JPO&NCIPI
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