| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can form a thin type semiconductor device without rebuilding facility. SOLUTION: The method comprises; a process for forming a first conduction type layer and a second conduction type layer on a first semiconductor substrate; a process for forming an oxide layer on at least one of the layer of the second conduction type of the first semiconductor substrate or a second semiconductor substrate, and bonding the first semiconductor layer and the second semiconductor layer through the oxide film; a process for polishing the first substrate in a predetermined thickness; a process for forming a base region, an emitter region, and a gate electrode on the first substrate; a process for forming selectively a mask on the surface of the second substrate; a process for applying passivation to surface by side of the gate electrode and surface by side of the emitter electrode of the first substrate; a process for using the oxide film as a stop layer and eliminating a part of the second substrate; a process for eliminating sealing and the passivation; and a process for forming an electrode on a surface of the layer of the second conduction type. COPYRIGHT: (C)2005,JPO&NCIPI
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