| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching apparatus capable of processing a large diameter workpiece with high in-plane uniformity. SOLUTION: The plasma etching system comprises a processing chamber 13 for performing plasma processing of a workpiece 1, a first processing gas supply 40, a second processing gas supply 50, a first gas inlet 65-1 for introducing processing gas into the processing chamber, a second gas inlet 65-2 for introducing processing gas into the processing chamber, flow regulators 42 and 53 for regulating the flow rate of processing gas, and a gas branch unit 60 for dividing a first processing gas into a plurality of branch flows. At least two gas pipes branched by the gas branch unit 60 are provided, respectively, with the first gas inlet 65-1 or the second gas inlet 65-2 and sections 63-1 and 63-2 for joining second processing gases are provided between the gas branch unit 60 and the first gas inlet 65-1 and between the gas branch unit 60 and the second gas inlet 65-2. COPYRIGHT: (C)2005,JPO&NCIPI
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